NXP Semiconductors
BAT754L
Schottky barrier triple diode
BAT754L
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? NXP B.V. 2012. All rights reserved
Product data sheet
22 November 2012
2
/
9
2.
Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
Graphic symbol
1
A1
anode (diode 1)
2
A2
anode (diode 2)
3
A3
anode (diode 3)
4
K3
cathode (diode 3)
5
K2
cathode (diode 2)
6
K1
cathode (diode 1)
1
3
2
4
5
6
TSSOP6 (SOT363)
K1
A1
K2
A2
K3
A3
aaa-005704
3.
Ordering information
Table 3.
Ordering information
Package
Type number
Name
Description
Version
BAT754L
TSSOP6
plastic surface-mounted package; 6 leads
SOT363
4.
Marking
Table 4.
Marking codes
Type number
Marking code
[1]
BAT754L
L1%
[1]
% = placeholder for manufacturing site code
5.
Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VR
reverse voltage
-
30
V
IF
forward current
-
200
mA
IFRM
repetitive peak forward current
tp
< 1 s; δ
< 0.5
-
300
mA
IFSM
non-repetitive peak forward
current
tp
< 10 ms; T
j(init)
= 25 °C
-
600
mA
Tj
junction temperature
-
125
°C
Tamb
ambient temperature
-55
125
°C
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